Toward accurate in-depth profiling of As and P ultra-shallow implants by SIMS

Autor:	E. de Chambost, A. Merkulov, M. Schuhmacher, P. Peres
Rok vydání:	2004
Předmět:	Silicon Ion yield Oxide Analytical chemistry General Physics and Astronomy chemistry.chemical_element Surfaces and Interfaces General Chemistry Condensed Matter Physics Surfaces Coatings and Films Ion chemistry.chemical_compound Monatomic ion Low energy chemistry Sputtering
Zdroj:	Applied Surface Science. :640-644
ISSN:	0169-4332
DOI:	10.1016/j.apsusc.2004.03.130
Popis:	A new technique is proposed for the depth profiling of low energy As and P implants. We show that monitoring the monatomic negatively charged ions of As− and P−, using oxygen backfilling (flooding) in combination with low energy Cs+ sputtering, improves the sensitivity of SIMS profiling and removes the variation of the ion yield at the native oxide/silicon interface.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::0ffdf11b5500eb9a10d2f6bbbd2f1cb3 https://doi.org/10.1016/j.apsusc.2004.03.130 Zobrazit plný text záznamu Full Text from ScienceDirect