Advanced Low Power Spintronic Memories beyond STT-MRAM
| Autor: | Sai Li, Weisheng Zhao, Wang Kang, Youguang Zhang, He Zhang, Zhaohao Wang |
|---|---|
| Rok vydání: | 2017 |
| Předmět: |
010302 applied physics
Engineering Magnetoresistive random-access memory Hardware_MEMORYSTRUCTURES Spintronics business.industry Electrical engineering Spin-transfer torque 02 engineering and technology 021001 nanoscience & nanotechnology Chip 01 natural sciences Commercialization Hardware_GENERAL 0103 physical sciences Scalability Spin Hall effect Racetrack memory 0210 nano-technology business |
| Zdroj: | ACM Great Lakes Symposium on VLSI |
| Popis: | Until now, spin transfer torque magnetic random access memory (STT-MRAM) has drawn considerable R&D interest worldwide. A number of companies and universities are currently involved in this promising technology. In 2016, Everspin released the first 256M STT-MRAM chip, indicating the commercialization and application of STT-MRAM. Nevertheless, STT-MRAM still has some intrinsic limitations, such as dynamic write power and speed, compared with CMOS-based memory technologies. Following the technical evolution process from toggle-MRAM to STT-MRAM, the continuous pursuit of high performance, high density, low power and scalability, drives the intensive R&D of new memory technologies. In this paper, we will show the recent progress in advanced spintronic memories beyond STT-MRAM, such as the spin Hall effect (SHE)-driven and voltage-driven MRAMs. These advanced MRAM technologies do have some unique advantages compared with STT-MRAM, but they also suffer from new design and fabrication challenges. In addition, we will present the latest research in emerging spintronic devices, e.g., magnetic skyrmions, which are potential as information carriers in future spintronic memories, e.g., racetrack memory. |
| Databáze: | OpenAIRE |
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