MOSFETs Made From GaN Nanowires With Fully Conformal Cylindrical Gates
| Autor: | Todd E. Harvey, Steven M. George, Aric W. Sanders, Kristine A. Bertness, Dragos Seghete, Paul T. Blanchard, Norman A. Sanford |
|---|---|
| Rok vydání: | 2012 |
| Předmět: |
Materials science
business.industry Nanowire Wide-bandgap semiconductor Nanotechnology Gallium nitride Computer Science Applications chemistry.chemical_compound Atomic layer deposition chemistry Logic gate MOSFET Optoelectronics Field-effect transistor Electrical and Electronic Engineering business Voltage |
| Zdroj: | IEEE Transactions on Nanotechnology. 11:479-482 |
| ISSN: | 1941-0085 1536-125X |
| Popis: | We report novel metal-oxide-semiconductor field effect transistors (MOSFETs) based on individual gallium nitride (GaN) nanowires with fully conformal cylindrical gates. The W/Al2O3 gates were deposited by atomic layer deposition. Reverse-bias breakdown voltages exceeded the largest gate voltage tested (-35 V). The nanowire MOSFETs showed complete pinchoff, with threshold voltages between -4 and -12 V. Maximum transconductances exceeded 10 μS, and ON/OFF current ratios higher than 10 8 were measured. Significant gating hysteresis and memory effects were also present, indicative of charge traps. Although further optimization is needed, these results represent a promising step forward in the development of efficient GaN nanowire-based FETs. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|