Phosphorus redistribution in the surface region of heavily phosphorus doped silicon
| Autor: | Wen Biao Ying, Makio Iida, Yusuke Mizokawa, Y.B. Yu, Yoshitomo Kamiura, Kazunori Kawamoto |
|---|---|
| Rok vydání: | 1996 |
| Předmět: |
Surface diffusion
Silicon Analytical chemistry Oxide Dangling bond General Physics and Astronomy chemistry.chemical_element Surfaces and Interfaces General Chemistry engineering.material Condensed Matter Physics Surfaces Coatings and Films chemistry.chemical_compound Polycrystalline silicon Chemical bond chemistry X-ray photoelectron spectroscopy engineering Single crystal |
| Zdroj: | Applied Surface Science. :561-565 |
| ISSN: | 0169-4332 |
| DOI: | 10.1016/0169-4332(96)00339-x |
| Popis: | Heavily phosphorus doped samples of both Si(100) and polycrystalline silicon (poly-Si) together with nondoped poly-Si were examined using X-ray photoelectron spectroscopy (XPS) and secondary ion mass spectroscopy (SIMS). The surfaces were treated by HF or a mixed solution of HCl, H 2 O 2 and H 2 O. The Si2p photoelectron spectra from the heavily P-doped samples showed a new peak at below 0.4 eV from the Si 0 state, which suggests that the Si-P bond and/or activated Si atoms with dangling bond exist in the surface region of as large as several nanometers. This is further supported by the analysis of P2p spectra. A lots of P atoms diffused to the surface and broke the Si-Si bond, which caused the surfaces chemically unstable. Consequently, although the H-terminated nondoped poly-Si surface showed no oxide features, the heavily P-doped samples of both Si(100) and poly-Si exhibited 0.5–1 nm thick oxides. The sputter profiles of XPS and SIMS revealed that P atoms redistributed in the thin native oxide film and formed not P 2 O 5 but Si-P and/or elemental-P, even without intentional heating. The P-segregation was much more pronounced for the single crystal Si than for the poly-Si. |
| Databáze: | OpenAIRE |
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