High temperature coefficient of resistance molybdenum oxide and nickel oxide thin films for microbolometer applications
| Autor: | Thomas N. Jackson, Mark W. Horn, Yao O. Jin, David B. Saint John, Nikolas J. Podraza |
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| Rok vydání: | 2015 |
| Předmět: |
Materials science
genetic structures Ion beam Nickel oxide General Engineering Analytical chemistry chemistry.chemical_element Atomic and Molecular Physics and Optics Nickel Ion beam deposition chemistry Molybdenum Electrical resistivity and conductivity sense organs Thin film Temperature coefficient |
| Zdroj: | Optical Engineering. 54:037101 |
| ISSN: | 0091-3286 |
| DOI: | 10.1117/1.oe.54.3.037101 |
| Popis: | Molybdenum oxide (MoOx) and nickel oxide (NiOx) thin films were deposited by reactive biased target ion beam deposition. MoOx thin film resistivity varied from 3 to 2000 Ω · cm with a temperature coefficient of re- sistance (TCR) from −1.7% to −3.2%∕K, and NiOx thin film resistivity varied from 1 to 300 Ω · cm with a TCR from −2.2% to −3.3%∕K, both easily controlled by varying the oxygen partial pressure. Biased target ion beam depos- ited high TCR MoOx and NiOx thin films are polycrystalline semiconductors and have good stability in air. Compared with commonly used vanadium oxide thin films, MoOx or NiOx thin films offer improved process control for resistive temperature sensors. © 2015 Society of Photo-Optical Instrumentation Engineers (SPIE) (DOI: 10.1117/1.OE.54.3.037101) |
| Databáze: | OpenAIRE |
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