155- and 213-GHz AlInAs/GaInAs/InP HEMT MMIC oscillators
| Autor: | April S. Brown, Gabriel M. Rebeiz, L.D. Nguyen, Linda P. B. Katehi, Lawrence E. Larson, L.M. Jelloian, M. Thompson, S.E. Rosenbaum, Mehran Matloubian, B.K. Kormanyos |
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| Rok vydání: | 1995 |
| Předmět: |
Radiation
Fabrication Materials science business.industry Electrical engineering chemistry.chemical_element Integrated circuit High-electron-mobility transistor Condensed Matter Physics law.invention Gallium arsenide chemistry.chemical_compound chemistry law Optoelectronics Electrical and Electronic Engineering business Indium Electron-beam lithography Monolithic microwave integrated circuit Molecular beam epitaxy |
| Zdroj: | IEEE Transactions on Microwave Theory and Techniques. 43:927-932 |
| ISSN: | 0018-9480 |
| DOI: | 10.1109/22.375256 |
| Popis: | We report on the design and measurement of monolithic 155- and 213-GHz quasi-optical oscillators using AlInAs/GaInAs/InP HEMT's. These results are believed to be the highest frequency three-terminal oscillators reported to date. The indium concentration in the channel was 80% for high sheet charge and mobility. The HEMT gates were fabricated with self-aligned sub-tenth-micrometer electron-beam techniques to achieve gate lengths on the order of 50 nm and drain-source spacing of 0.25 /spl mu/m. Planar antennas were integrated into the fabrication process resulting in a compact and efficient quasioptical Monolithic Millimeter-wave Integrated Circuit (MMIC) oscillator. > |
| Databáze: | OpenAIRE |
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