| Autor: |
Blaise Rouleau, Evgueniy Stefanov, Rene Escoffier, Gael Blondel |
| Rok vydání: |
2011 |
| Předmět: |
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| Zdroj: |
2011 IEEE 23rd International Symposium on Power Semiconductor Devices and ICs. |
| DOI: |
10.1109/ispsd.2011.5890867 |
| Popis: |
The paper deals with the thermal behavior for paralleled MOSFET's module during accelerated cycling burn-in test in harsh ambient and current conditions. The aim of the work is to optimize the key parameters acting on the self-heating in order to avoid undesirable failures resulting from overheating. An electro-thermal model is developed to simulate the device temperature during the test. Well calibrated to the experimental data for R on and avalanche phases, our model allowed realistic thermal prediction. The impact of gate bias, pulse time, as well as disparities of breakdown voltage between the FETs was analyzed and the test conditions were optimized. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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