| Autor: |
Klaus Schmalz, P. Gaworzewski, G. Morgenstern, Wolfgang Skorupa, H. Syhre, R. Kögler |
| Rok vydání: |
1993 |
| Předmět: |
|
| Zdroj: |
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 74:70-74 |
| ISSN: |
0168-583X |
| DOI: |
10.1016/0168-583x(93)95016-x |
| Popis: |
The gettering efficiency for iron of a buried carbon-rich layer formed by 10 MeV carbon implantation with doses in the range of 1014–1016 cm−2 and subsequent annealing was investigated. Iron was additionally introduced into the backside of the silicon wafers by implantation with an energy of 330 keV and doses of 1012 cm−2 and 1013 cm−2. Gettering of Fe sets in at a carbon dose of 1014 cm−2 and is completed at the surface of the wafer for a carbon dose of 1016 cm−2, both for the highest investigated iron dose of 1013 cm−2. Moreover, a through-the-wafer inspection of the iron distribution was made. Comparing the dopant properties after MeV implantation of carbon and silicon into silicon with different oxygen content it is shown that carbon related doping is dependent on the presence of carbon and oxygen. The only implantation induced damage in oxygen-rich silicon did not show any doping effect as revealed by self ion implantation of silicon. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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