The effect of fast neutrons on the electrophysical properties of nuclear-doped p-silicon
| Autor: | M. Karimov, N. A. Tursunov, Sh. Makhkamov, Sh. A. Makhmudov, A. A. Sulaimonov |
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| Rok vydání: | 2011 |
| Předmět: |
inorganic chemicals
Materials science Silicon Doping technology industry and agriculture Analytical chemistry General Physics and Astronomy chemistry.chemical_element Neutron temperature Condensed Matter::Materials Science chemistry Hall effect Electrical resistivity and conductivity Rectangular potential barrier Charge carrier Irradiation |
| Zdroj: | Russian Physics Journal. 54:589-593 |
| ISSN: | 1573-9228 1064-8887 |
| Popis: | The influence of the defects induced by fast-neutron irradiation on the rate of charge-carrier removal in nuclear-doped silicon (p-Si ) and a test p-Si sample is studied by measuring the Hall coefficient and resistivity at room temperature. It is shown that the rate of removal of charge carriers in p-Si is higher than that in p-Si . A barrier model is developed to explain the observed effect. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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