Response Variability in Commercial MOSFET SEE Qualification
| Autor: | Jean-Marie Lauenstein, Jeffrey L. Titus, K. Huntington, L. W. Mason, D. A. Clymer, M. Sivertz, R. Koga, E. Beach, T.L. Turflinger, Stephen E. Stone, J. George |
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| Rok vydání: | 2017 |
| Předmět: |
Nuclear and High Energy Physics
Engineering 010308 nuclear & particles physics business.industry Nuclear engineering Transistor 020206 networking & telecommunications 02 engineering and technology Semiconductor device 01 natural sciences Particle detector law.invention Safe operating area Nuclear Energy and Engineering law Logic gate 0103 physical sciences MOSFET 0202 electrical engineering electronic engineering information engineering Electronic engineering Field-effect transistor Electrical and Electronic Engineering business Voltage |
| Zdroj: | IEEE Transactions on Nuclear Science. 64:317-324 |
| ISSN: | 1558-1578 0018-9499 |
| DOI: | 10.1109/tns.2016.2633358 |
| Popis: | Single-event effects (SEE) evaluation of five different part types of next generation, commercial trench MOSFETs indicates large part-to-part variation in determining a safe operating area (SOA) for drain-source voltage ( $\text {V}_{\mathrm { {DS}}}$ ) following a test campaign that exposed >50 samples per part type to heavy ions. These results suggest a determination of a SOA using small sample sizes may fail to capture the full extent of the part-to-part variability. An example method is discussed for establishing a Safe Operating Area using a one-sided statistical tolerance limit based on the number of test samples. Burn-in is shown to be a critical factor in reducing part-to-part variation in part response. Implications for radiation qualification requirements are also explored. |
| Databáze: | OpenAIRE |
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