| Autor: |
Jan-Tsai Liu, Fu-Liang Yang, ChiaHua Ho, Chenming Hu, Cheng-San Wu, Cho-Lun Hsu, Chun-Chi Chen, Chien-Chao Huang |
| Rok vydání: |
2010 |
| Předmět: |
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| Zdroj: |
2010 International Electron Devices Meeting. |
| DOI: |
10.1109/iedm.2010.5703389 |
| Popis: |
Record 9nm half-pitch functional Transition-Metal-Oxide based Resistive Random Access Memory (TMORRAM) cell and the lowest reported 1µA programming current (I prog , both Set and Reset) have been achieved with thermally oxidized sub-stoichiometric WO x and Nano Injection Lithography (NIL) technique [1]. The unexpectedly low programming current at 9nm diameter has been examined in-depth, it offers potential for scaling low power non-volatile memory. This small device shows Reset/Set resistance ratio around 10, stability during read operation, and good data-retention. A switching mechanism based on oxygen-ion dynamics can account for the observed device characteristics as discussed in this work. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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