Growth of stable amorphous silicon films by gas-flow-controlled RF plasma-enhanced chemical vapor deposition
| Autor: | Akihisa Matsuda, Chisato Niikura |
|---|---|
| Rok vydání: | 2010 |
| Předmět: |
Amorphous silicon
Materials science Silicon Analytical chemistry chemistry.chemical_element Surfaces and Interfaces Plasma Chemical vapor deposition Condensed Matter Physics Surfaces Coatings and Films Electronic Optical and Magnetic Materials chemistry.chemical_compound Carbon film chemistry Plasma-enhanced chemical vapor deposition Electrode Materials Chemistry Deposition (phase transition) Electrical and Electronic Engineering |
| Zdroj: | physica status solidi (a). 207:521-524 |
| ISSN: | 1862-6319 1862-6300 |
| Popis: | We proposed a multi-hollow discharge-based plasma-enhanced chemical vapor deposition (PECVD) technique with gas-flow control for preparation of highly stable a-Si:H films at high rates. The conditions for multi-hollow plasma production have been optimized under radio-frequency (RF) and low pressure conditions. The effectiveness of the gas-flow control has been confirmed. As a result, a-Si:H films with a Si-H 2 density of 0 at.% were successfully obtained at a relatively high growth rate of 0.27 nm/s by the novel technique, even under RF conditions. Further optimization of electrode configuration and deposition conditions would improve the growth rate of a-Si:H films with high stability against light soaking. |
| Databáze: | OpenAIRE |
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