| Autor: |
D. Lutzenkirchen-Heicht, Pavel Serbun, Christian Prommesberger, Christoph Langer, Rupert Schreiner, G. Müller, V. Porshyn, R. Lawrowski |
| Rok vydání: |
2018 |
| Předmět: |
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| Zdroj: |
2018 31st International Vacuum Nanoelectronics Conference (IVNC). |
| Popis: |
We have investigated the properties of single n- and p-type black silicon (b-Si) pillars with a height of 20 μ m under strong electric field and halogen lamp or laser illumination. For both type of b-Si pillar structures, I-V measurements revealed strong activation effects, which consisted in sudden current increases during the first up/down voltage sweeps. The maximum reproducible emission current from a single n-type b-Si pillar structure was about 15 μ A. A pronounced saturation region at 240 nA was observed for a single p-type b-Si pillar. The current fluctuation over time showed a standard deviation of 28% and 2.5% for n- and p-type single b-Si pillar structures, respectively. Optical switching under halogen lamp illumination resulted in at least 3 times higher saturation currents and showed a linear dependence of the FE current on the laser power. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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