Crystal structure of Mn3Si2Te6
| Autor: | D. Bijaoui, H. Vincent, D. Leroux, R. Rimet, Claire Schlenker |
|---|---|
| Rok vydání: | 1986 |
| Předmět: |
Silicon
chemistry.chemical_element Manganese Crystal structure Condensed Matter Physics Chemical formula Electronic Optical and Magnetic Materials Inorganic Chemistry chemistry.chemical_compound Crystallography Octahedron chemistry Ferrimagnetism Group (periodic table) Telluride Materials Chemistry Ceramics and Composites Physical and Theoretical Chemistry |
| Zdroj: | Journal of Solid State Chemistry. 63:349-352 |
| ISSN: | 0022-4596 |
| DOI: | 10.1016/0022-4596(86)90190-8 |
| Popis: | The synthesis, magnetic, and electrical properties of a new silicon manganese telluride, semiconducting and ferrimagnetic, has been previously reported. The X-ray determination of the crystal structure of this compound was achieved by means of direct methods and three-dimensional Fourier syntheses. The final least-squares Rw factor of the refinement is Rw = 0.035. According to this study the chemical formula is Mn3Si2Te6 with Z = 2, the trigonal unit cell is a = 7.029(2), c = 14.255(3) A, the space group is P 3 1c . The crystal structure can be described as one of a layer-type compound. Along the c-axis direction, we observe a fully occupied layer of Mn or Si pairs octahedra, then a partially occupied layer of ordered Mn octahedra, and so on. The surroundings of Si atoms are similar to the one found in Si2Te3, and the fully occupied layer of octahedra may be compared to the one found in Fe2P2Se6. |
| Databáze: | OpenAIRE |
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