Low-noise performance of monolithically integrated 12-Gb/s p-i-n/HEMT photoreceiver for long-wavelength transmission systems
| Autor: | A. Mahajan, Patrick Fay, Sethumadhavan Chandrasekhar, W. Wohlmuth, C. Caneau, Ilesanmi Adesida |
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| Rok vydání: | 1998 |
| Předmět: |
Physics
Transimpedance amplifier business.industry Amplifier Transistor Bandwidth (signal processing) Electrical engineering High-electron-mobility transistor Pseudorandom binary sequence Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials law.invention Photodiode Wavelength law Optoelectronics Electrical and Electronic Engineering business |
| Zdroj: | IEEE Photonics Technology Letters. 10:713-715 |
| ISSN: | 1941-0174 1041-1135 |
| DOI: | 10.1109/68.669343 |
| Popis: | A high-speed monolithically integrated photoreceiver using a pin photodiode and low-noise high-electron mobility transistor (HEMT)-based electrical amplifier is reported. The photoreceiver uses a three-stage transimpedance amplifier with a bandwidth of 8.3 GHz. An on-wafer average input-referred noise current spectral density of 8.82 pA/Hz/sup 1/2/ was measured for the photoreceivers. Operation of the photoreceivers at bit rates up to 12 Gb/s was experimentally verified, and bit-error-rate (BER) measurements were performed. The photoreceivers demonstrated a sensitivity of -17.7 dBm at 10 Gb/s and -15.8 dBm at 12 Gb/s for a BER of 10/sup -9/ and nonreturn-to-zero (NRZ), 2/sup 31/-1 pattern length pseudorandom bit sequence (PRBS) data at a wavelength of 1.55 /spl mu/m. To the authors' knowledge, these are the first reported measured sensitivities for HEMT-based monolithic receivers using a long 2/sup 31/-1 pattern length at bit rates of 10 and 12 Gb/s, and represent the best directly measured sensitivities for monolithic HEMT-based photoreceivers at these bit rates. |
| Databáze: | OpenAIRE |
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