Silicon nanocrystal based memory devices for NVM and DRAM applications
| Autor: | B. Acred, B. Hradsky, Craig T. Swift, Matthew W. Stoker, Michael A. Sadd, Tushar P. Merchant, E. Prinz, S. Straub, K. Harber, M. Rossow, Bruce E. White, J. Yater, R.F. Steimle, Rajesh A. Rao, Ramachandran Muralidhar, S.G.H. Anderson |
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| Rok vydání: | 2004 |
| Předmět: |
Hardware_MEMORYSTRUCTURES
Materials science Passivation business.industry Condensed Matter Physics Electronic Optical and Magnetic Materials Flash (photography) Nanocrystal Hardware_GENERAL Area coverage Hardware_INTEGRATEDCIRCUITS Materials Chemistry Electronic engineering Optoelectronics Electrical and Electronic Engineering Silicon nanocrystals business Cmos process Dram Voltage |
| Zdroj: | Solid-State Electronics. 48:1463-1473 |
| ISSN: | 0038-1101 |
| DOI: | 10.1016/j.sse.2004.03.021 |
| Popis: | Si nanocrystal based devices have shown potential in reducing the operating voltages used in continuous floating gate FLASH devices. We discuss the critical aspects of this technology––nanocrystal formation by CVD, nanocrystal passivation, and HCI/FN mode of operation of non-volatile memory bitcells fabricated using a 0.13 μm CMOS process technology. The superior FN erase characteristics of nanocrystal memory compared to a SONOS device are demonstrated, which enables the use of thicker tunnel oxides in nanocrystal memory devices as required to mitigate READ disturb. It is shown that nanocrystal area coverage of |
| Databáze: | OpenAIRE |
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