Transport Investigations on High Purity MOVPE Grown GaAs
| Autor: | Bruno K. Meyer, M. Hollfelder, Detlev M. Hofmann, H. Hartdegen, G Steude |
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| Rok vydání: | 1999 |
| Předmět: |
Electron mobility
Scattering Chemistry Cyclotron resonance Analytical chemistry Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Condensed Matter Physics Epitaxy Electronic Optical and Magnetic Materials Photoexcitation Ionized impurity scattering Condensed Matter::Materials Science Impurity Metalorganic vapour phase epitaxy |
| Zdroj: | physica status solidi (b). 216:1039-1047 |
| ISSN: | 1521-3951 0370-1972 |
| DOI: | 10.1002/(sici)1521-3951(199912)216:2<1039::aid-pssb1039>3.0.co;2-b |
| Popis: | We studied high purity GaAs grown by optically detected cyclotron resonance (ODCR) using microwave frequencies at 36 and 140 GHz. The samples were grown by the metalorganic vapor phase epitaxy (MOVPE) using nitrogen as a carrier gas. The ODCR linewidth which is a measure of the mobility of the sample is dominated by neutral impurity scattering at low temperatures ( |
| Databáze: | OpenAIRE |
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