AlGaAs/GaAs DH and InGaP/GaAs DH grown by MOCVD on flexible metal substrates
| Autor: | Sicong Sun, Yao Yao, Nan Zheng, Monika Rathi, Ying Gao, Mojtaba Asadirad, Venkat Selvamanickam, Phil Ahrenkiel, Pavel Dutta, Jae-Hyun Ryou, M. Thomas, Ali Khadimallah |
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| Rok vydání: | 2016 |
| Předmět: |
010302 applied physics
Fabrication Materials science business.industry Heterojunction 02 engineering and technology Chemical vapor deposition Carrier lifetime 021001 nanoscience & nanotechnology Epitaxy 01 natural sciences Torr 0103 physical sciences Optoelectronics Metalorganic vapour phase epitaxy Thin film 0210 nano-technology business |
| Zdroj: | 2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC). |
| DOI: | 10.1109/pvsc.2016.7749960 |
| Popis: | High quality, epitaxial, AlGaAs and InGaP thin films have been grown by metal organic chemical vapor deposition (MOCVD) on flexible metal substrates using buffered GaAs on ion-beam textured epitaxial templates. The grown AlGaAs and InGaP films exhibit strong (00I) orientation and sharp in-plane texture. We also report preliminary developments on AlGaAs/GaAs and InGaP/GaAs double heterostructures (DH) to measure minority carrier life-time of GaAs thin films grown using MOCVD. Deposition of undoped AlGaAs was done on flexible GaAs/Ge template with a target Al concentration of 10–40 %, at different growth temperatures (650−800 oC) and 20 Torr process pressure. We have observed minority carrier lifetime of greater than 2 ns for GaAs films grown at 650 oC and sandwiched between Al 0 .2Ga 0 . 8 As DH grown at 750 oC. Deposition of lattice matched updoped In 0 . 48 Ga 0 . 52 P/GaAs is also in progress. Epitaxial AlGaAs and InGaP can be further utilized in the fabrication of flexible low-cost III-V solar cells on metal substrates. |
| Databáze: | OpenAIRE |
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