Comparison of iron-related recombination centers in boron, gallium, and indium doped silicon analyzed by defect parameter contour mapping
| Autor: | Andre Augusto, Mariana I. Bertoni, Simone Bernardini, Ethan Good, Nathan Stoddard, Tine Uberg Nærland |
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| Rok vydání: | 2017 |
| Předmět: |
010302 applied physics
Work (thermodynamics) Materials science Silicon Doping Analytical chemistry chemistry.chemical_element 02 engineering and technology 021001 nanoscience & nanotechnology 01 natural sciences Molecular physics chemistry 0103 physical sciences Orthorhombic crystal system Gallium 0210 nano-technology Boron Indium Recombination |
| Zdroj: | Energy Procedia. 124:138-145 |
| ISSN: | 1876-6102 |
| DOI: | 10.1016/j.egypro.2017.09.321 |
| Popis: | In this work, we are showing that iron (Fe) related defects in mono-silicon have very different recombination characteristics depending on the doping element employed. While the defect characteristics of the Fe in its dissociated state is comparably the same in the materials of investigation, the defect characteristics of the associated state vary considerably. By using, defect parameter contour mapping (DPCM), a newly developed method for analyzing temperature and injection dependent lifetime data, we have for the first time, been able to show that in the case of gallium doping it is the orthorhombic state of the Fe-acceptor complex that is dominating the lifetime. |
| Databáze: | OpenAIRE |
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