Atomic Layer Deposition of TiN below 600 K Using N2H4
| Autor: | Adam P. Hinckley, Anthony J. Muscat |
|---|---|
| Rok vydání: | 2018 |
| Předmět: |
010302 applied physics
Materials science Hydrazine chemistry.chemical_element 02 engineering and technology 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Titanium nitride Atomic and Molecular Physics and Optics Barrier layer chemistry.chemical_compound Atomic layer deposition chemistry Chemical engineering 0103 physical sciences General Materials Science 0210 nano-technology Tin |
| Zdroj: | Solid State Phenomena. 282:232-237 |
| ISSN: | 1662-9779 |
| DOI: | 10.4028/www.scientific.net/ssp.282.232 |
| Popis: | Atomic layer deposition (ALD) was used to grow titanium nitride (TiN) on SiO2with TiCl4and N2H4. X-ray photoelectron spectroscopy (XPS) and ellipsometry were used to characterize film growth. A hydrogen-terminated Si (Si-H) surface was used as a reference to understand the reaction steps on SPM cleaned SiO2. The growth rate of TiN at 573 K doubled on Si-H compared to SiO2because of the formation of Si-N bonds. When the temperature was raised to 623 K, O transferred from Ti to Si to form Si-N when exposed to N2H4. Oxygen and Ti could be removed at 623 K by TiCl4producing volatile species. The added surface reactions reduce the Cl in the film below detection limits. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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