| Autor: |
V.E. Stepanov, S.S. Khludkov, A.V. Chuntonov, A.A Koretski, V.B. Chmill, A. P. Vorobiev, Kevin M. Smith, O. P. Tolbanov, A.I. Potapov, L.S Okaevitch, A.V. Smol |
| Rok vydání: |
1998 |
| Předmět: |
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| Zdroj: |
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 409:247-250 |
| ISSN: |
0168-9002 |
| Popis: |
Some GaAs properties are presented in comparison with Si. Tomsk technology has proposed non-traditional way of a sensitive layer creation. As a result the radiation hardness of these detectors is up to 10 15 n / cm 2 at a neutron fluence and up to 2 × 10 14 p / cm 2 at a proton fluence. Due to a high concentration of impurity, the detector is capable of collecting a charge by itself without external bias. A previous beam test results of GaAs 50 μ m pitch microstrip detector prototype were reconsidered from the spatial resolution aspect. The proposal was to try a new topology: a 25 μ m pitch strips tied in pairs. In relation to readout and analysis it resembles a 50 μ m microstrip detector. A preliminary simulation has shown ∼9 μ m resolution instead of 14.4 μ m. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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