Raman and photoluminescence studies of transitions of quantum-confined acceptors
| Autor: | Jian-Bo Zhai, Wei-Yan Cong, Hai-Bei Huang, Xiang-Yan Meng, Wei-Min Zheng |
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| Rok vydání: | 2013 |
| Předmět: |
Photoluminescence
Condensed matter physics Condensed Matter::Other Chemistry Exciton Doping Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Condensed Matter Physics Molecular physics Spectral line Electronic Optical and Magnetic Materials Condensed Matter::Materials Science symbols.namesake Excited state symbols Ground state Raman spectroscopy Molecular beam epitaxy |
| Zdroj: | physica status solidi (b). 250:1352-1355 |
| ISSN: | 0370-1972 |
| DOI: | 10.1002/pssb.201248293 |
| Popis: | The internal transitions of Be acceptors confined in the center of GaAs/AlAs multiple quantum wells are investigated by Raman and photoluminescence (PL) spectra. A series of Be δ-doped GaAs/AlAs multiple quantum wells with doping at the well center and well widths ranging from 30 to 200 A were grown on (100) GaAs substrates by molecular beam epitaxy. Both the Raman and PL spectra were measured at 4 and 20 K, respectively. The confined longitudinal optical (LO) modes, and transitions of Be acceptors from the 1S3/2(Γ6) ground state to 2S3/2(Γ6) first excited state were clearly observed in Raman spectra. Two-hole transitions of the acceptor-bound excitons from the 1S3/2(Γ6) ground state to the 2S3/2(Γ6) first excited state were also observed. It is found that the experimental results in the Raman spectra are close to those measured in the PL experiments. |
| Databáze: | OpenAIRE |
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