Influence of deposition angle on the properties of NiO spin-valves
| Autor: | F. Fettar, B. Dieny, F. Ernult, Stéphane Auffret, M. Cartier, Pascale Bayle-Guillemaud |
|---|---|
| Rok vydání: | 2002 |
| Předmět: |
Condensed Matter::Materials Science
Hysteresis Magnetic anisotropy Materials science Condensed matter physics Plane of incidence Annealing (metallurgy) Non-blocking I/O General Physics and Astronomy Condensed Matter::Strongly Correlated Electrons Giant magnetoresistance Magnetic force microscope Anisotropy |
| Zdroj: | Journal of Applied Physics. 91:1436-1443 |
| ISSN: | 1089-7550 0021-8979 |
| DOI: | 10.1063/1.1428098 |
| Popis: | Bottom and top spin-valves comprising NiO as pinning layer were prepared by depositing the NiO layer either at normal or oblique incidence onto Si/SiO2 substrates. When the NiO layer is deposited at oblique incidence, a strong uniaxial anisotropy is observed in the hysteresis loop of the Co layer which is exchange coupled to this layer. The easy axis is perpendicular to the plane of incidence. In contrast, when the NiO layer is deposited at normal incidence, the hysteresis loops of the exchange coupled Co layer show an in-plane isotropy. The uniaxial anisotropy observed after oblique incidence deposition is ascribed to growth-induced uniaxial strain and magnetoelastic effects in the NiO antiferromagnetic layer. It is observed that after annealing under a magnetic field, Co/NiO bilayers in which the NiO has been deposited at oblique incidence exhibit symmetric hysteresis loops whereas similar bilayers in which the NiO has been deposited at normal incidence exhibit shifted hysteresis loops. This effect is r... |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|