Photoelastic Waveguides Using Strain-Compensated InAsP/InGaP Multi-Quantum-Wells

Autor:	L. S. Yu, Qizhi Z. Liu, S. S. Lau, Charles W. Tu, X. B. Mei
Rok vydání:	1995
Předmět:	Stress (mechanics) Wavelength Materials science Strain (chemistry) business.industry Optoelectronics Anisotropy business Quantum well Intensity (heat transfer) Transverse mode Semiconductor heterostructures
Zdroj:	MRS Proceedings. 379
ISSN:	1946-4274 0272-9172
DOI:	10.1557/proc-379-303
Popis:	Photoelastic optical waveguides using strain-compensated InAsP/InGaP multiplequantum-well (MQW) have been fabricated. Lateral light confinement for waveguiding is achieved by introducing stress into semiconductor heterostructures with stable WNi surface stressor stripes. The waveguides have been characterized at both 1.52 μm and 1.32 μm wavelength in term of TE/TM intensity ratio. At 1.52 μm, the waveguides favor the propagation of TE mode, and the TE/TM intensity ratio can be as large as 15 dB. At 1.32 μm, the TE and TM intensity can be comparable. Anisotropy of waveguides fabricated along [110] or [110] directions has also been observed in term of TE/TM intensity ratio, which suggests the presence of anisotropic property of the strain-compensated MQW.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::0f75ddeb840dfb83a9d2a866c0d76499 https://doi.org/10.1557/proc-379-303 Zobrazit plný text záznamu Full text from SpringerLink