Wavelength-selective 4H-SiC UV-sensor array
| Autor: | Tobias Erlbacher, Lothar Frey, Christian D. Matthus, Anton J. Bauer |
|---|---|
| Rok vydání: | 2019 |
| Předmět: |
010302 applied physics
Materials science Fabrication business.industry Spectral responsivity Mechanical Engineering 02 engineering and technology 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences law.invention Wavelength Sensor array Mechanics of Materials law 0103 physical sciences Optoelectronics General Materials Science Quantum efficiency Photolithography 0210 nano-technology business |
| Zdroj: | Materials Science in Semiconductor Processing. 90:205-211 |
| ISSN: | 1369-8001 |
| DOI: | 10.1016/j.mssp.2018.10.019 |
| Popis: | In this work, monolithically integrated wavelength-selective 4H-SiC UV-sensor arrays were manufactured using two photolithography masks and only one implantation sequence demonstrating the potential of the advanced 4H-SiC process technology for the first time. The process technology is described in detail for the fabrication of a 2 × 2 wavelength-sensitive UV-sensor array including two variants with different thicknesses of the p-emitter. The maximum spectral responsivity is 92 mA/W for a wavelength of 300 nm and the devices with a thick p-emitter and 162 mA/W for a wavelength of 290 nm and devices with the thin p-emitter. The corresponding values of the external quantum efficiency are 38%, and 69%, respectively. Furthermore, another UV-sensor characteristic is found evaluating the current difference between both types with a maximum spectral responsivity of 80.2 mA/W at a wavelength of 270 nm. |
| Databáze: | OpenAIRE |
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