Dual-Carrier High-Gain Low-Noise Superlattice Avalanche Photodiodes
| Autor: | Siddhartha Ghosh, M. M. Hayat, Jun Huang, K. Banerjee |
|---|---|
| Rok vydání: | 2013 |
| Předmět: |
Materials science
APDS business.industry Noise figure Avalanche photodiode Noise (electronics) Avalanche breakdown Electronic Optical and Magnetic Materials law.invention Multiple exciton generation Condensed Matter::Materials Science Impact ionization Optics Single-photon avalanche diode law Optoelectronics Electrical and Electronic Engineering business |
| Zdroj: | IEEE Transactions on Electron Devices. 60:2296-2301 |
| ISSN: | 1557-9646 0018-9383 |
| DOI: | 10.1109/ted.2013.2264315 |
| Popis: | In this paper, novel avalanche photodiode structures with alternate carrier multiplication nanometer regions, placed next to a wider electron multiplication region, to create dual-carrier feedback systems, are proposed. Gain and excess noise factor of these structures are calculated based on the dead space multiplication theory under uniform electric field. In addition, the equivalent impact ionization ratios are derived and compared. It is observed that the proposed structures can generate much higher gain compared with conventional pure electron multiplication structures under the same electric field without severely degrading the excess noise quality. Excess noise is further optimized with careful adjustment of thin multiplication regions' thicknesses. These high-gain structures can operate under low-bias ( |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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