Reconfigurable Complementary Monolayer MoTe2 Field-Effect Transistors for Integrated Circuits
| Autor: | Takashi Taniguchi, Amritesh Rai, Hema C. P. Movva, Emanuel Tutuc, Stefano Larentis, Babak Fallahazad, Kenji Watanabe, Sanjay K. Banerjee, Kyounghwan Kim |
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| Rok vydání: | 2017 |
| Předmět: |
Materials science
business.industry Transistor Contact resistance General Engineering General Physics and Astronomy Schottky diode Nanotechnology 02 engineering and technology Integrated circuit 010402 general chemistry 021001 nanoscience & nanotechnology 01 natural sciences 0104 chemical sciences law.invention Threshold voltage law Optoelectronics General Materials Science Field-effect transistor 0210 nano-technology business Electronic circuit Diode |
| Zdroj: | ACS Nano. 11:4832-4839 |
| ISSN: | 1936-086X 1936-0851 |
| Popis: | Transition metal dichalcogenides are of interest for next generation switches, but the lack of low resistance electron and hole contacts in the same material has hindered the development of complementary field-effect transistors and circuits. We demonstrate an air-stable, reconfigurable, complementary monolayer MoTe2 field-effect transistor encapsulated in hexagonal boron nitride, using electrostatically doped contacts. The introduction of a multigate design with prepatterned bottom contacts allows us to independently achieve low contact resistance and threshold voltage tuning, while also decoupling the Schottky contacts and channel gating. We illustrate a complementary inverter and a p-i-n diode as potential applications. |
| Databáze: | OpenAIRE |
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