Current-induced defect conductivity in hydrogenated silicon-rich amorphous silicon nitride

Autor:	J. M. Shannon, A. D. Annis
Rok vydání:	1995
Předmět:	Materials science Condensed matter physics Silicon technology industry and agriculture chemistry.chemical_element Electron Conductivity equipment and supplies Condensed Matter Physics chemistry.chemical_compound Silicon nitride chemistry Electric field Current (fluid) Quantum tunnelling Diode
Zdroj:	Philosophical Magazine Letters. 72:323-329
ISSN:	1362-3036 0950-0839
DOI:	10.1080/09500839508242470
Popis:	In general, current transport through thin-film metal-semiconductor-metal diodes containing hydrogenated silicon-rich amorphous silicon nitride (a-SiNx: H) is determined by electron tunnelling through the potential barriers at the metal-semiconductor contacts. After prolonged current stressing, however, there is a change in the transport mechanism and a large increase in the current. It is shown that the excess current flow is well described by field-enhanced emission of carriers via charged defect states throughout the bulk of the silicon nitride. The effect of the electric field and dependence on defect concentration is consistent with the transport of holes in the vicinity of the valence band tail. As stressing proceeds, more defect states are introduced and the conductivity of the a-SiNx:H increases.
Databáze:	OpenAIRE
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