Quaternary InGaAsSb Thermophotovoltaic Diodes
| Autor: | S. Burger, L. R. Danielson, E. Brown, G. Nichols, Christine A. Wang, P. F. Baldasaro, H. Ehsani, W.F. Topper, G. C. Taylor, Michael K. Connors, K. D. Rahner, Ramon U. Martinelli, S. Anikeev, D.M. Depoy, Z. Shellenbarger, M. W. Dashiell, D. Donetski, J Beausang, Jizhong Li, Serge Luryi, Gregory Belenky, Robin K. Huang, P. Talamo, George W. Turner, P. Fourspring |
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| Rok vydání: | 2006 |
| Předmět: |
Materials science
Auger effect business.industry Open-circuit voltage Band gap Energy conversion efficiency Electronic Optical and Magnetic Materials symbols.namesake Thermophotovoltaic symbols Optoelectronics Metalorganic vapour phase epitaxy Electrical and Electronic Engineering business Diode Power density |
| Zdroj: | IEEE Transactions on Electron Devices. 53:2879-2891 |
| ISSN: | 1557-9646 0018-9383 |
| Popis: | InxGa1-xAsySb1-y thermophotovoltaic (TPV) diodes were grown lattice matched to GaSb substrates by metal-organic vapor phase epitaxy in the bandgap range of EG = 0.5 to 0.6 eV. InGaAsSb TPV diodes, utilizing front-surface spectral control filters, are measured with thermal-to-electric conversion efficiency and power density (PD) of nTPV = 19.7% and PD = 0.58 W/cm2, respectively, for a radiator temperature of Tradiator = 950 degC, diode temperature of Tdiode = 27 degC, and diode bandgap of EG = 0.53 eV. Practical limits to TPV energy conversion efficiency are established using measured recombination coefficients and optical properties of front surface spectral control filters which for 0.53-eV InGaAsSb TPV energy conversion are nTPV = 28% and PD = 0.85 W/cm2 at the above operating temperatures. The most severe performance limits are imposed by 1) diode open-circuit voltage (VOC) limits due to intrinsic Auger recombination and 2) parasitic photon absorption in the inactive regions of the module. Experimentally, the diode VOC is 15% below the practical limit imposed by intrinsic Auger recombination processes. Analysis of InGaAsSb diode electrical performance versus diode architecture indicates that VOC and thus efficiency are limited by extrinsic recombination processes such as through bulk defects |
| Databáze: | OpenAIRE |
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