| Autor: |
Qi Zhang, Wuyun, Cailin Wang, Jingtao Ge |
| Rok vydání: |
2019 |
| Předmět: |
|
| Zdroj: |
2019 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC). |
| DOI: |
10.1109/edssc.2019.8754389 |
| Popis: |
A step trench and field limiting ring(FLR) termination structure with n+ short anode region is analyzed by using 2-dimensional numerical simulation in this paper. Take for 4.5kV Dual-GCT as an example, the improved structures with the whole and partial n+ short anode and the conventional structure without n+ short anode are compared, the results show that the partial n+ short anode can reduce the leakage current and the negative differential resistance effect. In addition, the partial n+ short anode structure can reduce the time of turn-off and has lower peak electric field during turnoff. Moreover, this design basically does not change the other characteristics of the device. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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