Absolute cross section for the formation of Si(1S) atoms following electron impact dissociation of SiH4
| Autor: | N. Abramzon, Kurt Becker, K. E. Martus |
|---|---|
| Rok vydání: | 2000 |
| Předmět: |
Silanes
Silicon Chemistry Branching fraction Analytical chemistry General Physics and Astronomy chemistry.chemical_element Fluorescence Dissociation (chemistry) Fluorescence spectroscopy chemistry.chemical_compound Physical and Theoretical Chemistry Atomic physics Electron scattering Electron ionization |
| Zdroj: | The Journal of Chemical Physics. 113:2250-2254 |
| ISSN: | 1089-7690 0021-9606 |
| Popis: | A combination of electron scattering and laser-induced fluorescence (LIF) techniques was used in the experimental determination of the absolute cross section for the formation of Si(1S) ground-state atoms following the neutral molecular dissociation of SiH4 by electron impact for energies from 20 eV to 100 eV. Electron impact on SiH4 produces—among other species—Si(1S) ground-state atoms which are detected by pumping the Si(3p)2 1S→(3p)(4s)1P transition at 390 nm with a tunable dye laser and recording the subsequent Si(3p)(4s)1P→(3p)2 1D fluorescence at 288 nm. We found a peak cross section for the formation of Si(1S) atoms from SiH4 of 4.5×10−17 cm2 at an impact energy of 60 eV. When compared to the previously determined total SiH4 neutral dissociation cross section obtained from measurements in a constant-flow plasma reactor [Perrin et al., Chem. Phys. 73, 383 (1982)], we find a branching ratio of about 0.037 for the formation of Si(1S) atoms in the electron-impact induced neutral dissociation of SiH4. ... |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|