The Minimizaton Method of Transistor Ageing Influence on Modern Voltage References

Autor: Gegham A. Petrosyan, Hayk Grigoryan, Vakhtang A. Janpoladov, Hayk V. Margaryan, Hakob T. Kostanyan, Harutyun T. Kostanyan, Harutyun G. Kirakosyan, Mushegh T. Grigoryan
Rok vydání: 2020
Předmět:
Zdroj: 2020 IEEE 40th International Conference on Electronics and Nanotechnology (ELNANO).
DOI: 10.1109/elnano50318.2020.9088844
Popis: Modern VLSI circuits are widely used in different aspects of the engineering design, such as household appliances, mobile devices, PCs, automobiles, airlines, military and space systems etc. More detailed accuracy and reliability levels are required from the applications on which the human life can be depend. Inside the modern integrated circuits (IC) the major roles are playing the analog parts and the common structures by which the implements the design of analog system. Such as operational amplifier, rectifiers, analog-to-digital converters etc. In this paper the reliability improvement techniques for operational amplifiers have been proposed. Based on the implemented schematic design improvements the ageing effects of the MOS transistors in operational amplifiers have been minimized resulting increase of the lifetime of both the transistors and the ICs.
Databáze: OpenAIRE