| Autor: |
Motoya Okazaki, Adam Brand, Hao Chen, Miao Jin, Xinyu Bao, Ming Zhang, Bingxi Wood, Hongwen Zhou, Errol Antonio C. Sanchez, Christopher Hatem, Samuel Swaroop Munnangi, Man-Ping Cai |
| Rok vydání: |
2015 |
| Předmět: |
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| Zdroj: |
2015 International Symposium on VLSI Technology, Systems and Applications. |
| Popis: |
III-V materials are candidates for high mobility channel and low contact resistance SD at 5nm technology node and beyond [1]. Traditional Si+ ion implant of In 0.53 Ga 0.47 As at room temperature causes amorphization of fin and formation of stacking fault defects upon activation anneal. We have demonstrated heated implant can eliminate amorphization induced crystalline damages and improve fin conductance. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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