Dependences of the hole mobility in the strained Si pMOSFET and gated Hall bars formed on SiGe/Si(1 1 0) on the channel direction and the strained Si thickness

Autor:	Atsushi Onogawa, Daichi Namiuchi, Yuichi Sano, Kiyokazu Nakagawa, Taisuke Fujisawa, Keisuke Arimoto, Daisuke Izumi, Junji Yamanaka, Kosuke O. Hara, Kentarou Sawano
Rok vydání:	2021
Předmět:	Electron mobility Materials science business.industry Valence band structure Heterojunction Semiconductor device Condensed Matter Physics Inorganic Chemistry Power consumption Materials Chemistry Optoelectronics business Anisotropy Layer (electronics) Communication channel
Zdroj:	Journal of Crystal Growth. 571:126246
ISSN:	0022-0248
DOI:	10.1016/j.jcrysgro.2021.126246
Popis:	Strained Si/relaxed SiGe/Si(1 1 0) heterostructures are gaining interest as an attractive candidate for a Si-wafer-based material for semiconductor devices with enhanced performances and lower power consumption, since a significant enhancement of the hole mobility has been demonstrated in this system. In this paper, dependences of the hole mobility on the channel direction and the strained Si layer thickness are discussed to reveal detailed transport properties of the (1 1 0)-oriented pMOSFETs. A significant anisotropy was found regarding the hole mobility, and the 1 ¯ 10 direction was found to be a preferable channel direction regarding the hole mobility. Also, it was found that strained Si layer should be sufficiently thin to achieve a high mobility. The physical mechanisms of the anisotropy and the thickness dependence of the hole mobility are discussed by considering the configuration of defects and the valence band structure.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::0f1f0b4e01170a6a008098754c13817b https://doi.org/10.1016/j.jcrysgro.2021.126246 Zobrazit plný text záznamu Full Text from ScienceDirect