Electrical and materials properties of AlN/ HfO2 high-k stack with a metal gate
| Autor: | Carolyn F. H. Gondran, David Gilmer, Sadao Sasaki, Kimberly G. Reid, Sri Samavedam, Dina H. Triyoso, Anthony Dip |
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| Rok vydání: | 2009 |
| Předmět: |
Materials science
business.industry Gate dielectric Metals and Alloys Equivalent oxide thickness Surfaces and Interfaces Nitride Surfaces Coatings and Films Electronic Optical and Magnetic Materials Threshold voltage Atomic layer deposition Stack (abstract data type) Materials Chemistry Optoelectronics Metal gate business High-κ dielectric |
| Zdroj: | Thin Solid Films. 517:2712-2718 |
| ISSN: | 0040-6090 |
| Popis: | In this study, aluminum nitride (AlN) was grown by molecular layer deposition on HfO 2 that had been deposited on 200 mm Si (100) substrates. The AlN was grown on HfO 2 using sequential exposures of trimethyl-aluminum and ammonia (NH 3 ) in a batch vertical furnace. Excellent thickness uniformity on test wafers from the top of the furnace to the bottom of the furnace (across the furnace load) was obtained. The equivalent oxide thickness was 16.5–18.8 A for the AlN/HfO 2 stack on patterned device wafers with a molybdenum oxynitride metal gate with leakage current densities from low 10 − 5 to mid 10 − 6 A/cm 2 at threshold voltage minus one volt. There was no change in the work function with the AlN cap on HfO 2 with the MoN metal gate, even with a 1000 °C anneal. |
| Databáze: | OpenAIRE |
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