The Instability of the CV Characteristics’ Capacitance When Measuring AlGaN/GaN-Heterostructures and the HEMT-Transistors Based on Them
| Autor: | V. G. Goryachev, K. L. Enisherlova, V. G. Saraykin, S. A. Kapilin |
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| Rok vydání: | 2017 |
| Předmět: |
010302 applied physics
Materials science business.industry Transistor Schottky diode Heterojunction 02 engineering and technology High-electron-mobility transistor 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Capacitance 500 kHz Electronic Optical and Magnetic Materials law.invention Barrier layer law 0103 physical sciences Materials Chemistry Optoelectronics Electrical and Electronic Engineering 0210 nano-technology business Leakage (electronics) |
| Zdroj: | Russian Microelectronics. 46:591-599 |
| ISSN: | 1608-3415 1063-7397 |
| Popis: | AlGaN/GaN heterostructures and AlGaN/GaN/SiC HEMT-transistors’ Schottky barriers (SBs) are studied by the capacitance–voltage (CV) method and the SIMS method in order to determine the causes of the capacitance instability in some cases. It is shown that in most cases, the appearance of a capacitance peak on the CV curves at frequencies of 20 to 500 kHz is associated with the presence of leakage currents in the barrier layer and at low frequencies of 1 to 20 kHz with the generation–recombination centers. |
| Databáze: | OpenAIRE |
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