Damage accumulation in He implanted SiC at different temperatures

Autor:	Alain Declémy, Marie-France Beaufort, Jean François Barbot
Rok vydání:	2012
Předmět:	Diffraction Energy loss Materials science Ion implantation Strain (chemistry) Materials Chemistry Surfaces and Interfaces Large range Electrical and Electronic Engineering Composite material Condensed Matter Physics Surfaces Coatings and Films Electronic Optical and Magnetic Materials
Zdroj:	physica status solidi (a). 210:218-221
ISSN:	1862-6300
DOI:	10.1002/pssa.201200364
Popis:	The defect accumulation in helium-implanted 4H–SiC was studied in a large range of temperatures through the elastic strain build-up determined by using X-ray diffraction measurements. The interstitial type defects formation and accumulation result in the strain build-up that was modelled with a multi-step damage accumulation. The gradient of strain imputed to the ion implantation processes leads to the additional step of defect accumulation where the nuclear energy loss is maximal. This phenomenon is enhanced when the formation of bubbles takes place.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::0f0e2da6a73ad0ac646bb327e0713c80 https://doi.org/10.1002/pssa.201200364 Zobrazit plný text záznamu Plný text