Influence of the properties of p-a-Si:H layer and the work function of front contact on silicon heterojunction solar cell performance

Autor:	Varsha T. Babu, M Anjitha, B R Arya, Sanjay K. Ram, Archana Udayan, K S Parvathy, S Gopika, Niveditha Nair
Rok vydání:	2022
Předmět:	Amorphous silicon Materials science Computer simulation business.industry Open-circuit voltage Heterojunction law.invention chemistry.chemical_compound chemistry law Solar cell Optoelectronics Work function business Electronic band structure Layer (electronics)
Zdroj:	Materials Today: Proceedings. 49:1617-1624
ISSN:	2214-7853
DOI:	10.1016/j.matpr.2021.07.421
Popis:	Heterojunction c-Si and hydrogenated amorphous silicon (a-Si:H) devices with intrinsic a-Si:H thin layer, known as HIT solar cells, are promising alternatives to conventional c-Si solar cells for the possibility of higher open circuit voltage, low temperature processing and lower costs. We have studied the influence of the properties of p-a-Si:H layer and the work function of the front electrode material on the performance parameters of n-c-Si based HIT solar cells using numerical simulation. The findings are further analyzed using energy band diagrams and carrier concentration profiles at the heterointerface of a-Si:H/n-c-Si to reveal the underlying charge transport mechanisms.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::0f041a9f210474ae5223dbbe9f20d9ce https://doi.org/10.1016/j.matpr.2021.07.421 Zobrazit plný text záznamu Full Text from ScienceDirect