Process control of organosilicon plasmas for barrier film preparations

Autor:	Ricardo d'Agostino, Ritalba Lamendola
Rok vydání:	1998
Předmět:	chemistry.chemical_compound X-ray photoelectron spectroscopy chemistry Permeability (electromagnetism) General Chemical Engineering Analytical chemistry Process control Deposition (phase transition) Infrared spectroscopy General Chemistry Plasma Thin film Organosilicon
Zdroj:	Pure and Applied Chemistry. 70:1203-1208
ISSN:	1365-3075 0033-4545
DOI:	10.1351/pac199870061203
Popis:	Hexamethyldisiloxanexygen and hexameth ldisilazaneoxygen rf plasmas have been used for deposition of organosilicon and H i02-like thin films with high banier properties. Plasma phase has been investigated by Actinometric Optical Emission Spectroscopy; X-Ray Photoelectron Spectroscopy and Infrared Spectroscopy have been used for films surface and bulk composition. A semi- quantitative model of deposition has been assumed which accounts for the deposition kinetics and film composition. A practical process control parameter has been developed by acthometry, able to monitor film composition and 02 and H20 vapour permeability.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::0efe37a67f6cd9718c82944e4b03311c https://doi.org/10.1351/pac199870061203 Zobrazit plný text záznamu