Resistance and electromigration performance of 6 nm wires

Autor:	Ramanan V. Chebiam, Jasmeet S. Chawla, Seung Hoon Sung, Colin T. Carver, James S. Clarke, Mona Mayeh, Hui Jae Yoo, Bojarski Stephanie A, Robert B. Turkot, B. Krist, Manish Chandhok, Christopher J. Jezewski, M. J. Kobrinski, M. Harmes
Rok vydání:	2016
Předmět:	010302 applied physics Interconnection Materials science business.industry 020209 energy Electrical engineering chemistry.chemical_element 02 engineering and technology 01 natural sciences Electromigration Copper Line (electrical engineering) Reliability (semiconductor) Electrical resistance and conductance chemistry 0103 physical sciences 0202 electrical engineering electronic engineering information engineering Electrical performance Optoelectronics business Lithography
Zdroj:	2016 IEEE International Interconnect Technology Conference / Advanced Metallization Conference (IITC/AMC).
Popis:	A process to achieve 6 nm minimum dimension interconnect wires is realized using standard 193 nm lithography. Various metals including copper are optimized to gap fill features, and tested for electrical performance and reliability. Measurements showing line electrical resistance and electromigration as functions of material, conducting area, and interfaces are presented.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::0ef6d19c9cb91ec92150a2e1406226f6 https://doi.org/10.1109/iitc-amc.2016.7507682 Zobrazit plný text záznamu