Stopping cross sections of 50- to 230-keV nitrogen ions in silicon measured by ion backscattering spectroscopy

Autor:	V. I. Sakharov, D. V. Denisov, V. V. Afrosimov, R. N. Il’in, I. T. Serenkov
Rok vydání:	2009
Předmět:	Cross section (physics) Materials science Physics and Astronomy (miscellaneous) Silicon chemistry Impurity chemistry.chemical_element Heavy ion Nanometre Atomic physics Spectroscopy Nitrogen Ion
Zdroj:	Technical Physics. 54:783-789
ISSN:	1090-6525 1063-7842
DOI:	10.1134/s1063784209060048
Popis:	The energy dependence of the total stopping cross section of 50- to 230-keV nitrogen ions in silicon (σ S (E)) is measured in order to develop the diagnostics of heavy impurities in films of a nanometer thickness by heavy ion backscattering (HIBS) spectroscopy. At ion energies lower than 150 keV, this σ S (E) dependence occupies an intermediate position between the dependences given in the SRIM and MSTAR data-bases; at higher energies, our dependence is closer to the former dependence. The estimation of the effect of inelastic processes on the stopping cross section demonstrates that the effect of these processes for nitrogen ions can be neglected when heavy impurities in such films are studied by HIBS.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::0ef2fc76ac38cd4667248cb7843d97fb https://doi.org/10.1134/s1063784209060048 Zobrazit plný text záznamu Plný text ve formátu PDF