Characterization of HDP FSG process

Autor: Zheng-Jun Hu, Shou-Mian Chen, Hong Shi, Wen-Qiang Li, Wen-Fang Qin
Rok vydání: 2006
Předmět:
Zdroj: 2006 8th International Conference on Solid-State and Integrated Circuit Technology Proceedings.
DOI: 10.1109/icsict.2006.306248
Popis: Full factorial design (2 level) is used to study the F% influenced by the different process parameters, gas flow, power etc. X-SEM study on gap-filling and metal top line clipping (metal clipping) is also performed. High temperature vacuum baking is used to study the fluorinated-silicate-glass (FSG) film stability. Dielectric constant of bulk FSG with different F% is extracted by MIS structure
Databáze: OpenAIRE