A numerical simulation study of CuInS2 solar cells
| Autor: | Yunbin He, Jiali Tai, Mingkai Li, Lei Zhang, Wang Zhiqiang, Jingang Fang, Xunzhong Shang |
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| Rok vydání: | 2014 |
| Předmět: |
Materials science
Band gap business.industry Photovoltaic system Metals and Alloys Surfaces and Interfaces Surfaces Coatings and Films Electronic Optical and Magnetic Materials law.invention law Solar cell Materials Chemistry Microelectronics Optoelectronics Quantum efficiency Photonics business Layer (electronics) Current density |
| Zdroj: | Thin Solid Films. 550:649-653 |
| ISSN: | 0040-6090 |
| DOI: | 10.1016/j.tsf.2013.10.047 |
| Popis: | In this paper CuInS 2 solar cells have been numerically simulated based on a one-dimensional device physics simulator: Analysis of Microelectronic and Photonic Structures. Solar cells having a typical structure Al/ZnO:Al/ n -CdS/ p -CuInS 2 /Mo have been modeled. Various factors that affect cell performance have been studied, such as thickness and bandgap of the CuInS 2 absorber layer, and thickness of the CdS buffer layer. The photovoltaic parameters are determined from the current density–voltage curves. The solar spectral response and recombination mechanism of the cells are represented by quantum efficiency– λ curves and net recombination rate–position curves, respectively. In this study, a simulated efficiency of 20.4% has been obtained with open-circuit voltage of 0.94 V, short-circuit current density of 26.2 mA/cm 2 and fill factor of 0.84 for the CuInS 2 solar cell with a bandgap of 1.40 eV. It is found that optimal thicknesses of the CuInS 2 absorber layer and the CdS buffer layer are around 2000 and 50 nm, respectively, while optimal bandgap of the CuInS 2 absorber layer is 1.40 eV. |
| Databáze: | OpenAIRE |
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