Scanning probe microscopy of AlGaAs/GaAs diode after partial electrical breakdown

Autor:	Prokhor A. Alekseev, A A Podoskin, Mikhail S. Dunaevskiy, A O Mikhaylov, Sergey O. Slipchenko
Rok vydání:	2018
Předmět:	History Materials science business.industry education Electrical breakdown Oxide Computer Science Applications Education Scanning probe microscopy Algaas gaas chemistry.chemical_compound chemistry Optoelectronics Breakdown voltage business Voltage Semiconductor heterostructures Diode
Zdroj:	Journal of Physics: Conference Series. 1124:081013
ISSN:	1742-6596 1742-6588
Popis:	Scanning probe microscopy allows to study surface processes in semiconductor heterostructures. This work shows the investigation of topography and surface potential distribution in AlGaAs/GaAs p-n diode after applied reverse voltage. Formation of oxide on the surface in the area of p-n junction was found due to increasing of the applied reverse voltage. Formed oxide increases a breakdown voltage by 20%.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::0ebf6860fea81c0ac4d8d222ff3c5867 https://doi.org/10.1088/1742-6596/1124/8/081013 Zobrazit plný text záznamu