Frequency-Doubled Wafer-Fused 638 nm VECSEL with an Output Power of 5.6 W
| Autor: | Antti Rantamäki, Alexei Sirbu, Mircea Guina, Vladimir Iakovlev, Emmi Kantola, Tomi Leinonen |
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| Rok vydání: | 2018 |
| Předmět: |
Materials science
business.industry Second-harmonic generation 02 engineering and technology Heat sink 021001 nanoscience & nanotechnology Laser 01 natural sciences law.invention Power (physics) 010309 optics Electricity generation law 0103 physical sciences Optoelectronics Wafer 0210 nano-technology business |
| Zdroj: | Conference on Lasers and Electro-Optics. |
| Popis: | We report on a frequency doubled vertical-external-cavity surface-emitting laser emitting 5.6 W at 635 nm. The cavity employed a wafer-fused AlInGaAs/InP-AlAs/GaAs gain mirror in a V-shaped configuration. The heatsink temperature was 20 °C. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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