Highly efficient birefringent quarter-wave plate based on all-dielectric metasurface and graphene
| Autor: | Peng Liu, Calvine F. Ominde, Hanning Yang, Edgar O. Owiti, Xiudong Sun |
|---|---|
| Rok vydání: | 2018 |
| Předmět: |
Materials science
Silicon Physics::Optics chemistry.chemical_element 02 engineering and technology Dielectric 01 natural sciences Waveplate law.invention 010309 optics Optics law 0103 physical sciences Electrical and Electronic Engineering Physical and Theoretical Chemistry Circular polarization Birefringence Graphene business.industry 021001 nanoscience & nanotechnology Polarization (waves) Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials chemistry Photonics 0210 nano-technology business |
| Zdroj: | Optics Communications. 419:114-119 |
| ISSN: | 0030-4018 |
| Popis: | All-dielectric metasurfaces offer remarkable properties including high efficiency and flexible control of the optical response. However, extreme, narrow bandwidth is a limitation that lowers applicability of these structures in photonic sensing applications. In this work, we numerically design and propose a switchable quarter-wave plate by hybridizing an all-dielectric metasurface with graphene. By using a single layer of graphene between a highly refractive index silicon and a silica substrate, the transmissive resonance is enhanced and broadened. Additionally, integrating graphene with silicon effectively modulates the Q-factor and the trapped magnetic modes in the silicon. A stable birefringence output is obtained and manipulated through the structure dimensions and the Fermi energy of graphene. A 95% polarization conversion ratio is achieved through converting linearly polarized light into circularly polarized light, and a 96% ellipticity ratio is obtained at the resonance wavelength. The structure is compact and has an ultrathin design thickness of 0 . 1 λ , in the telecommunication region. The above properties are essential for integration into photonic sensing devices and the structure has potential for compatibility with the CMOS devices. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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