Estimations of Activation Energy for Dislocation Mobility in p-GaN
| Autor: | V. I. Orlov, Eugene B. Yakimov, Alexander Y. Polyakov, P. S. Vergeles, Gyu Cheol Kim, In Hwan Lee |
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| Rok vydání: | 2021 |
| Předmět: | |
| Zdroj: | ECS Journal of Solid State Science and Technology. 10:026004 |
| ISSN: | 2162-8777 2162-8769 |
| DOI: | 10.1149/2162-8777/abe4e9 |
| Popis: | Temperature dependence of dislocation rosettes size growth in p-GaN has been investigated. It is shown that the star-of-David-like rosettes form in p-GaN even at room temperature while in n-GaN such rosettes are formed only at temperatures exceeding 573 K. The activation energy for the dislocation glide was estimated as 450 ± 100 meV, which is lower than 720 ± 160 meV in n-GaN. Cathodoluminescence study reveals a decrease of 3.28 and 3.2 eV peak intensities in dislocated region. |
| Databáze: | OpenAIRE |
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