Plasma enhanced chemical deposition of nanocrystalline silicon carbonitride films from trimethyl(phenylamino)silane
| Autor: | Yu. M. Rumyantsev, B. M. Ayupov, N. I. Fainer, V. I. Rakhlin |
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| Rok vydání: | 2011 |
| Předmět: |
Materials science
Silicon Scanning electron microscope Energy-dispersive X-ray spectroscopy Analytical chemistry Nanocrystalline silicon chemistry.chemical_element Condensed Matter Physics Silane chemistry.chemical_compound symbols.namesake chemistry Ellipsometry Materials Chemistry Ceramics and Composites symbols Fourier transform infrared spectroscopy Raman spectroscopy |
| Zdroj: | Glass Physics and Chemistry. 37:316-321 |
| ISSN: | 1608-313X 1087-6596 |
| DOI: | 10.1134/s1087659611030114 |
| Popis: | Synthetic process for nanocrystalline silicon carbonitride films was developed using plasma-chemical decomposition of a new organosilicon reagent, namely, trimethyl(phenylamino)silane Me3SiNHPh. Synthesis was carried out from the gaseous mixtures, such as Me3SiNHPh + He, Me3SiNHPh + N2, and Me3SiNHPh + NH3, in a reactor in the wide temperature range (473–973 K) under the low pressure (4–5 × 10−2 Torr). Polished wafers of Si(100), Ge(111), and silica glass were used as substrates. Dependences of the chemical and phase compositions, the surface morphology, and the silicon carbonitride optical properties on the process temperature were studied using FTIR and Raman spectroscopy, energy dispersive spectroscopy (EDS), atomic force microscopy (AFM), scanning electron microscopy (SEM), ellipsometry, and spectrophotometry. |
| Databáze: | OpenAIRE |
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