Negative Electron Beam Resists Using Ring-Chain Tautomerism of Benzoic Acid Derivatives

Autor:	Shou-ichi Uchino, Kaori Kimura
Rok vydání:	1999
Předmět:	Polymers and Plastics organic chemicals Organic Chemistry Hydrogen transfer Ring (chemistry) Photochemistry Tautomer chemistry.chemical_compound chemistry Resist Polymer chemistry Materials Chemistry Cathode ray Trifluoromethanesulfonate Dissolution Benzoic acid
Zdroj:	Journal of Photopolymer Science and Technology. 12:359-364
ISSN:	1349-6336 0914-9244
DOI:	10.2494/photopolymer.12.359
Popis:	New negative electron-beam (EB) resists based on ring-chain tautomerism of benzoic acid derivatives have been developed. o-Acetylbenzoic acid (ABA), which converts into the ring-tautomer through a hydrogen transfer from the carboxyl group to the carbonyl group, was selected as the precursor of dissolution inhibitor for the new resist. The resist composed of ABA, diphenyliodonium triflate, and m, p-cresol novolak resin enables us to define 300-nm line and 500-nm space patterns with a dose of 75μC/cm2 at 70kV. Spectroscopic studies show that the acid-catalyzed protection of hydroxyl groups of novolak resin brought about by ABA is responsible for the resist insolubilization.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::0ea2a355f16164a1afc30febbedf0381 https://doi.org/10.2494/photopolymer.12.359 Zobrazit plný text záznamu