Proton radiation effects in 0.35 /spl mu/m partially depleted SOI MOSFETs fabricated on UNIBOND
| Autor: | M.S.T. Liu, Hyun-Chul Kim, J. Patel, M.J. Palmer, Ying Li, John D. Cressler, Guofu Niu, Paul W. Marshall, Robert A. Reed |
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| Rok vydání: | 2002 |
| Předmět: |
Nuclear and High Energy Physics
Materials science Silicon business.industry Band gap Transistor Oxide Electrical engineering chemistry.chemical_element Silicon on insulator law.invention Threshold voltage chemistry.chemical_compound Nuclear Energy and Engineering chemistry law MOSFET Optoelectronics Irradiation Electrical and Electronic Engineering business |
| Zdroj: | IEEE Transactions on Nuclear Science. 49:2930-2936 |
| ISSN: | 1558-1578 0018-9499 |
| Popis: | We investigate the proton radiation tolerance of a 0.35 /spl mu/m SOI technology on UNIBOND material. The radiation response is characterized by threshold-voltage shifts of the front-gate and back-gate transistors. An increase of the front-gate threshold voltage is observed on the n-channel MOSFETs after irradiation and is attributed to radiation-induced interface states at the front-gate oxide/silicon interface. A double g/sub m/ peak behavior is observed on the back-gate g/sub m/-V/sub GS/ curves for both n- and p-channel MOSFETs and is attributed to silicon/back-gate oxide interface traps with a delta-function-like distribution in the energy gap. The results suggest this 0.35 /spl mu/m technology on UNIBOND material performs well in a proton-radiation environment. |
| Databáze: | OpenAIRE |
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